Etchant composition, method for etching multilayered film, and method for preparing display device

ABSTRACT

Embodiments provide an etchant composition including (A) a copper ion source, (B) a source of an organic acid ion having one or more carboxyl groups in a molecule, (C) a fluoride ion source, (D) an etching controller, a surface oxidizing power enhancer or a combination thereof as a first additive, and (E) a surfactant as a second additive; a method for etching a multilayered film; and a method for preparing a display device.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of and priority toPCT/KR2015/010586, filed on Oct. 7, 2015, entitled (translation),“ETCHANT COMPOSITION, METHOD FOR ETCHING MULTILAYERED FILM, AND METHODFOR PREPARING THE SAME,” which claims the benefit of and priority toKorean Patent Application No. 10-2014-0136592, filed on Oct. 10, 2014,each of which is hereby incorporated by reference in their entirety intothis application.

BACKGROUND Field

Embodiments relate to an etchant composition, a method for etching amultilayered film, and a method for preparing a display device. Forexample, embodiments relate to an etchant composition used for etching amultilayered film containing copper and titanium, a method for etching amultilayered film containing copper and titanium using the same, and amethod for preparing a display device using the same.

Description of Related Art

Conventionally, aluminum or an aluminum alloy has been used as a wiringmaterial of a display device such as a flat panel display. However,recently, in view of the enlargement of displays, as well as theimplementation of high resolution therein, a problem of signal delay dueto a phenomenon such as wiring resistance, or the like, may occur,whereby it may be difficult to uniformly display a screen.

Therefore, research into the adoption of a wiring, in which copper, amaterial having relatively low resistance, is a main component, has beenundertaken. However, when copper is used for a gate wiring, adhesivenessbetween a substrate such as glass, or the like, and copper, may not besufficient. In addition, when copper is used for a source drain wiring,a problem of diffusion toward a silicon semiconductor film, a substratethereof, may occur. Therefore, in order to prevent the problem describedabove, research into the stacking of a barrier film in which metal,having not only high adhesiveness to a substrate such as glass or thelike but also barrier properties in which diffusion toward a siliconsemiconductor film is limited, is disposed has been undertaken. Themetal may be a metal such as titanium (Ti) or molybdenum (Mo), and themultilayer thin film may be a multilayer thin film of copper or alloysthereof.

On the other hand, such a multilayer thin film wiring may be obtained,as a multilayer thin film is formed on a substrate such as glass, or thelike, in a film formation process such as a sputtering method, or thelike, and an electrode pattern may be formed by etching using a resistor the like as a mask thereafter. An etching method may be a wet methodusing an etchant and a dry method using an etching gas such as plasma,or the like. In this case, the etchant used in the wet method isrequired (i) to have high machining accuracy, (ii) not to generate anetching residue, (iii) to have high stability and safety of a componentand to allow for easy handling of the component, (iv) to have a stableetching performance, and the like.

On the other hand, an etchant used in an etching process of copper ingeneral may be an etchant containing hydrogen peroxide as a maincomponent, an etchant containing persulfate as a main component, and thelike. However, an etchant containing a component such as hydrogenperoxide or persulfate may have a problem in which productivity may bereduced and an amount of waste liquid may be increased due to a changeover time caused by instability of a liquid, and may have a problem inwhich a risk may be increased by heat and gas generated by rapiddecomposition.

On the other hand, as an etchant used for an etching process of coppernot containing peroxide, or the like, an ammonia alkaline etchantcontaining a copper ion and ammonia is known. However, since such analkaline etchant has a high pH, a large amount of ammonia is volatilizedfrom the etchant. Therefore, due to a reduction in the concentration ofammonia, an etching rate may vary, or a working environment may besignificantly degraded. In addition, when pH is high, a problem in whicha resist is dissolved may occur. On the other hand, since pH is adjustedwithin a neutral range, ammonia may be prevented from being volatilizedfrom an etchant. In this case, when an alkaline etchant is rinsed withwater, a problem in which a residue is precipitated may occur. On theother hand, in the case of an ammonia alkaline etchant containing acopper ion and ammonia, titanium etching is also limited.

SUMMARY

Embodiments provide an etchant composition not causing the problemdescribed above, but having various advantages which will be describedlater, a method for etching a multilayered film using the same, and amethod for preparing a display device using the same.

An objective of various embodiments is not limited to the abovedescription. An objective of the various embodiments may be understoodfrom the overall content of the present disclosure, and additionalobjectives of the various embodiments will be readily apparent to thoseskilled in the art to which the present disclosure belongs.

According to at least one embodiment, there is provided an etchantcomposition including: (A) a copper ion source; (B) a source of anorganic acid ion having one or more carboxyl groups in a molecule; (C) afluoride ion source; (D) an etching controller, a surface oxidizingpower enhancer, or a combination thereof, as a first additive; and (E) asurfactant, as a second additive.

According to at least one embodiment, in the etchant composition, thecontents of (A) to (E) may be 0.02 mol/kg to 1.0 mol/kg of (A) thecopper ion source; 0.01 mol/kg to 3.0 mol/kg of (B) the source of anorganic acid ion having one or more carboxyl groups in a molecule; 0.01mol/kg to 1.0 mol/kg of (C) the fluoride ion source; 0.01 mol/kg to 3.0mol/kg of (D) the first additive; and 1.0 ppm to 30,000 ppm of (E) thesecond additive.

According to at least one embodiment, (A) the copper ion source, may beat least one selected from the group consisting of copper, coppersulfate, copper nitrate, copper chloride, copper fluoride, copperphosphide, copper hydroxide, copper acetate, copper citrate, copperlactate, copper oleate, a copper silicon compound, copper bromide, andcopper carbonate.

According to at least one embodiment, (B) the source of an organic acidion having one or more carboxyl groups in a molecule, may be at leastone selected from the group consisting of formic acid, acetic acid,propionic acid, butyric acid, caproic acid, caprylic acid, capric acid,lauric acid, stearic acid, gluconic acid, citric acid, tartaric acid,malic acid, succinic acid, oxalic acid, maleic acid, and an ammoniumsalt thereof.

According to at least one embodiment, a mixing ration of (B) the sourceof an organic acid ion with respect to (A) the copper ion source may be0.01 to 150.0 times on a molar basis

According to at least one embodiment, (C) the fluoride ion source may beat least one selected from the group consisting of hydrofluoric acid,ammonium fluoride, acid ammonium fluoride, potassium fluoride, ammoniumfluoroborate, potassium bisulfite, potassium borofluoride, sodiumfluoride, sodium bisulfite, aluminum fluoride, boron fluoride, lithiumfluoride, calcium fluoride, and copper fluoride.

According to at least one embodiment, a mixing ratio of (C) the fluorideion source with respect to (A) the copper ion source may be 0.01 to 50.0times on a molar basis.

According to at least one embodiment, (D) the etching controller, as afirst additive, may preferably be a halogen ion source except a fluorineion. In more detail, the etching controller may be at least one selectedfrom the group consisting of hydrochloric acid, potassium chloride,sodium chloride, ammonium chloride, bromic acid, potassium bromide,sodium bromide, ammonium bromide, iodic acid, potassium iodide, sodiumiodide, and ammonium iodide.

According to at least one embodiment, (D) the surface oxidizing powerenhancer, as a first additive, may preferably be an inorganic acid. Inmore detail, the surface oxidizing power enhancer may be at least oneselected from the group consisting of sulfuric acid, nitric acid,phosphoric acid, and hydrochloric acid.

According to at least one embodiment, a mixing ratio of (D) the firstadditive with respect to (A) the copper ion source may be 0.01 to 150.0times on a molar basis.

According to at least one embodiment, (E) the surfactant, as a secondadditive, may preferably be a nonionic surfactant. In more detail, thesurfactant may be at least one selected from the group consisting ofpolyethyleneglycol, polypropyleneglycol, polyetherpolyol,polyglycololeicacid, gelatin, and an ethylene oxide (EO)-propylene oxide(PO) copolymer.

According to at least one embodiment, the etchant composition mayfurther include (F) an alkali metal salt, as a third additive.

According to at least one embodiment, (F) the alkali metal salt, as athird additive, may be at least one selected from the group consistingof an alkali metal salt containing halogen, an alkali metal salt of anorganic acid having one or more carboxyl groups in a molecule, and analkali metal salt of a strong alkali.

According to at least one embodiment, in the etchant composition, thecontent of (F) the third additive may be 0.01 mol/kg to 2.0 mol/kg.

According to at least one embodiment, a mixing ratio of (F) the thirdadditive with respect to (A) the copper ion source may be 0.01 to 100times on a molar basis.

According to at least one embodiment, the etchant composition may have apH value of 3 or less.

According to at least one embodiment, the etchant composition may be anetchant composition used for etching a multilayered film containingcopper and titanium.

According to another embodiment, there is provided a method for etchinga multilayered film including: contacting an etchant compositionincluding (A) a copper ion source, (B) a source of an organic acid ionhaving one or more carboxyl groups in a molecule, (C) a fluoride ionsource, (D) an etching controller, a surface oxidizing power enhancer,or a combination thereof, as a first additive, and (E) a surfactant, asa second additive, with a multilayered film containing copper andtitanium.

According to at least one embodiment, the etchant composition may notcontain hydrogen peroxide and persulfate.

According to another embodiment, there is provided a method forpreparing a display device including: forming a gate pattern, forming agate line and a gate electrode connected to each other on a substrate;forming data pattern, forming a data line intersecting, while beinginsulated from, the gate line, a source electrode connected to the dataline, and a drain electrode spaced apart from the source electrode;forming a pixel electrode connected to the drain electrode; and forminga common electrode insulated from the pixel electrode, wherein at leastone of the forming a gate pattern and the forming a data patternincludes forming a metal layer on the substrate, and etching the metallayer with an etchant composition.

According to at least one embodiment, the etchant composition mayinclude (A) a copper ion source, (B) a source of an organic acid ionhaving one or more carboxyl groups in a molecule, (C) a fluoride ionsource, (D) an etching controller, a surface oxidizing power enhancer,or a combination thereof, as a first additive, and (E) a surfactant, asa second additive.

According to at least one embodiment, the metal layer may be amultilayered film including a copper film and a titanium film.

According to at least one embodiment, the metal layer may be amultilayered film including a copper film and a molybdenum film.

In addition, the solution of the problem described above does not listall the features of the various embodiments. In the present disclosure,various features in addition to advantages and effects due to thevarious features may be understood in more detail with reference to thefollowing specific embodiments.

According to at least one embodiment, an etchant composition accordingto various examples may be not required to include hydrogen peroxide orpersulfate. Thus, generation of a gas or heat caused by a decompositionreaction thereof may be prevented. As a result, etching may be stablyperformed. In addition, since pH of a liquid is low, a liftingphenomenon of a photoresist caused by high pH may not occur. Due toexcellent lifespan, a liquid replacement time is long. Thus, an amountof a waste liquid is reduced, whereby the etchant composition isenvironmentally friendly and economical.

On the other hand, when an etchant composition according to variousembodiments is used, an etching rate of a multilayered film may befreely adjusted, critical dimension loss may be significantly reduced,an etching residue or a precipitation may be prevented from beinggenerated, linearity may be significantly increased, and surfaceroughness may be significantly reduced. Furthermore, when an etchantcomposition according to the present disclosure is used, an angle of ametal pattern may be freely adjusted. Thus, 40°±10° may be implemented.

DETAILED DESCRIPTION

FIG. 1 is a cross-sectional view exemplarily illustrating an etchingresult of a multilayered film containing copper and titanium accordingto an embodiment.

FIG. 2 is images, in which an etching result of a multilayered filmcontaining copper and titanium, having a composition of ComparativeExample 3, is observed using an electron microscope.

FIG. 3 is images, in which an etching result of a multilayered filmcontaining copper and titanium, having a composition of Example 2, isobserved using an electron microscope.

FIGS. 4A and 4B are flow charts illustrating a method of manufacturing adisplay device according to an embodiment.

FIGS. 6A, 8A, 9A, and 10A are plan views sequentially illustrating amethod of manufacturing a display device according to an embodiment.

FIGS. 5, 6B, 7, 8B, 9B, 10B, and 11 are cross-sectional viewssequentially illustrating a method of manufacturing a display deviceaccording to an embodiment.

FIGS. 6B, 8B, 9B, and 10B are cross-sectional views taken along lineI-I′ of FIGS. 6A, 8A, 9A, and 10A.

Hereinafter, various embodiments will be described in detail withreference to the drawings. However, the embodiments may be modified intovarious other forms, and the scope is not limited to the embodimentsdescribed below. Furthermore, the embodiments are provided to more fullydescribe the present disclosure to those skilled in the art.

1. Etchant Composition

The inventors of the various embodiments have conducted research tosolve the problems described above. As a result, when a multilayeredfilm containing copper and titanium using an etchant compositionincluding a copper ion source, a source of an organic acid ion havingone or more carboxyl groups in a molecule, and a fluoride ion source,and additionally including a combination of specific additives, it hasbeen found that not only the problems described above may be solved, butalso there are various excellent advantages.

In more detail, an etchant composition according to at least oneembodiment may include: (A) a copper ion source; (B) a source of anorganic acid ion having one or more carboxyl groups in a molecule; (C) afluoride ion source; (D) an etching controller, a surface oxidizingpower enhancer or a combination thereof, as a first additive; and (E) asurfactant, as a second additive.

Hereinafter, each component forming an etchant composition according toat least one embodiment will be described in more detail.

(A) Copper Ion Source

A copper ion source included in the etchant composition according to atleast one embodiment (hereinafter, simply referred to as component (A))is a component acting as an oxidizing agent of copper. The copper ionsource is not particularly limited as long as it may supply a copperion. For example, the copper ion source may be, in addition to copper, acopper inorganic salt such as copper sulfate, copper nitrate, copperchloride, copper fluoride, copper phosphide, copper hydroxide, or thelike; a copper organic salt such as copper acetate, copper citrate,copper lactate, copper oleate, or the like; a metal salt containingcopper such as a copper silicon compound, copper bromide, coppercarbonate, or the like; or the like. The copper ion source may be usedalone, or a plurality of copper ion sources may be used in combination.

There are no limitations, and in at least one embodiment, the copper ionsource may be, preferably copper, copper nitrate, copper sulfate, copperhydroxide, and copper acetate, among them, and more preferably coppersulfate, copper nitrate, and copper acetate. In this case, the copperion source may more excellently perform a role of an oxidizing agent ofcopper.

On the other hand, the copper ion source is included in an etchantcomposition of 1 kg, preferably in the range of 0.02 mol to 1.0 mol.When the copper ion source less than 0.02 mol is included, a copperetching rate may not be in a satisfactory level. When the copper ionsource exceeding 1.0 mold is included, a copper etching rate mayincrease. Thus, there may be limitations on controlling the etchingrate, and a probability of precipitation increases. A more preferablerange thereof is the range of 0.1 mol to 0.5 mol. When the content of acopper ion source in an etchant composition according to at least oneembodiment is within the range described above, a better etching ratemay be obtained.

(B) Source of Organic Acid Ion

A source of an organic acid ion included in an etchant compositionaccording to at least one embodiment (hereinafter, simply referred to ascomponent (B)) basically functions as an etching agent of copper byforming a complex with a copper ion, and further has functions ofimproving stability of an etchant composition and stabilizing an etchingrate. In addition, in a water rinsing process after etching, the sourceof an organic acid ion may have an effect of suppressing generation of aresidue precipitated when an etchant composition is diluted with water.The source of an organic acid ion is not particularly limited as long asit may be an organic acid compound having one or more carboxyl groups ina molecule. For example, the source of an organic acid ion may be formicacid, acetic acid, propionic acid, butyric acid, caproic acid, caprylicacid, capric acid, lauric acid, stearic acid, gluconic acid, citricacid, tartaric acid, malic acid, succinic acid, oxalic acid, maleicacid, an ammonium salt thereof, or the like. The source of an organicacid ion may be used alone, or a plurality of organic acid ion sourcesmay be used in combination.

There are no limitations, and an etchant composition according to atleast one embodiment may preferably be a source of an organic acid ionhaving two or more carboxyl groups in a molecule as a source of anorganic acid ion among the compounds described above. In this regard,the source of an organic acid ion having two or more carboxyl groups ina molecule may have excellent solubility with respect to water andstability in an etchant composition, and may further improve etchingperformance. In more detail, the etchant composition may preferably becitric acid, tartaric acid, oxalic acid, maleic acid, an ammonium saltthereof, or the like, but is not limited thereto.

On the other hand, the source of an organic acid ion is included in anetchant composition of 1 kg, preferably in the range of 0.01 mol to 3.0mol. When the source of an organic acid ion is included in an amountless than 0.01 mol, a copper etching rate may not be satisfactory. Whenthe source of an organic acid ion is included in an amount exceeding 3.0mol, a copper etching rate may increase. Thus, there may be limitationson controlling the etching rate. A more preferable range is the range of0.1 mol to 2.0 mol. In addition, a mixing ratio of the source of anorganic acid ion with respect to the copper ion source is preferably0.01 to 150.0 times, and more preferably, 0.1 to 40.0 times, on a molarbasis. When the content and a mixing ratio of a source of an organicacid ion in an etchant composition according to at least one embodimentare within the range described above, a better etching rate may beobtained and the generation of a precipitated residue may effectively besuppressed.

(C) Fluoride Ion Source

A fluoride ion source included in an etchant composition according to atleast one embodiment (hereinafter, simply referred to as component (C))has a function of improving etching ability of titanium. The fluorideion source is not particularly limited as long as it may supply afluorine ion. For example, the fluoride ion source may be hydrofluoricacid, ammonium fluoride, acid ammonium fluoride, potassium fluoride,ammonium fluoroborate, potassium bisulfite, potassium borofluoride,sodium fluoride, sodium bisulfite, aluminum fluoride, boron fluoride,lithium fluoride, calcium fluoride, copper fluoride, or the like. Thefluoride ion source may be used alone, or a plurality of fluoride ionsources may be used in combination.

There are no limitations, and in an etchant composition according to atleast on embodiment, the fluoride ion source may be, preferablyhydrofluoric acid, ammonium fluoride, acid ammonium fluoride, potassiumfluoride, and sodium fluoride, and more preferably ammonium fluoride,acid ammonium fluoride, and potassium fluoride. In this case, thefluoride ion source may more excellently perform a role of an oxidizingagent of titanium.

On the other hand, the fluoride ion source may be included in an etchantcomposition of 1 kg, preferably in the range of 0.01 mol to 1.0 mol, andmore preferably in the range of 0.1 mol to 0.5 mol. In addition, amixing ratio of the fluoride ion source with respect to the copper ionsource is preferably 0.01 to 50.0 times, and more preferably, 0.01 to5.0 times, on a molar basis. When the content of a fluoride ion sourcein an etchant composition according to at least one embodiment is withinthe range described above, a better etching rate may be obtained. Whenthe fluoride ion source is included in an amount less than 0.1 mol, atitanium etching rate may not be satisfactory. When the fluoride ionsource exceeds 1.0 mol, a titanium etching rate may increase. Thus,damage to glass, a base material, may be intensified or limited to beingcontrolled.

On the other hand, when a fluoride ion source in which two atoms offluorine are contained in a molecule such as acid ammonium fluoride,acid potassium fluoride, or the like, as a component (C), the content ofthe component (C) is defined as being twice the content of a fluorideion source.

In addition, a fluoride ion source included in an etchant compositionmay not be dissociated in a liquid as a fluorine ion (F), or may bepresent as a difluoride hydrogen ion (HF₂ ⁻). However, a mol number, inthe case that the fluoride ion source is fully dissociated, is thecontent of the component (C).

In addition, a fluoride salt of copper such as copper fluoride, or thelike may act as the component (C) while having a function as thecomponent (A) described above. Thus, when a fluoride salt of copper isincluded in an etchant composition according to at least one embodiment,the content of the component (A) may be a content in which anothercopper ion source and a fluoride salt of copper are totalled, and thecontent of the component (C) may be the content in which anotherfluoride ion source and a fluoride salt of copper are totalled.

(D) First Additive

An etchant composition according to at least one embodiment may furtherinclude an etching controller, a surface oxidizing power enhancer or acombination thereof, as a first additive (hereinafter, simply referredto as component (D)). According to the study of the inventors of thevarious embodiments, as described above, when an etching controllerand/or a surface oxidizing power enhancer is further included, as afirst additive, a further excellent etching rate may be obtained ascompared to the case in which the etching controller and/or the surfaceoxidizing power enhancer is not further included, as a first additive.Furthermore, generation of an etching residue or a precipitation may besignificantly reduced. In more detail, when an etching controller isfurther included, a further excellent etching rate may be obtained ascompared to the case in which the etching controller is not furtherincluded. When a surface oxidizing power enhancer is further included inaddition thereto, the generation of an etching residue or aprecipitation may be also significantly reduced.

On the other hand, the etching controller may adjust an etching rate ofa copper layer, and an etching controller known in the art may be usedwithout limitation as long as it may have an effect as described above.For example, there are no limitations, and the etching controller maypreferably be a halogen ion source such as hydrochloric acid, potassiumchloride, sodium chloride, ammonium chloride, bromic acid, potassiumbromide, sodium bromide, ammonium bromide, iodic acid, potassium iodide,sodium iodide, ammonium iodide, or the like, except the fluorine ion.The etching controller may be used alone, or a plurality of etchingcontrollers may be used in combination.

In addition, the surface oxidizing power enhancer allows a surface ofcopper to be easily oxidized, when an exposed copper layer outside aphotoresist is etched, in order to smoothly perform etching. As long asthe surface oxidizing power enhancer has an effect described above, asurface oxidizing power enhancer commonly known in the art may be usedwithout limitation. For example, there are no limitations, and thesurface oxidizing power enhancer may preferably be an inorganic acidsuch as sulfuric acid, nitric acid, phosphoric acid, hydrochloric acid,or the like. The surface oxidizing power enhancer may be used alone, ora plurality of surface oxidizing power enhancers may be used incombination. On the other hand, in the case of inorganic acid containinga halogen element such as hydrochloric acid, or the like, the inorganicacid may functions as an etching controller described above.

On the other hand, the first additive is included in an etchantcomposition of 1 kg, preferably in the range of 0.01 mol to 3.0 mol,more preferably in the range of 0.1 mol to 2.0 mol, and further morepreferably in the range of 0.5 mol to 1.5 mol. In addition, a mixingratio of the first additive with respect to the copper ion source maybe, preferably 0.01 to 150.0 times, more preferably 0.1 to 40.0 times,and further more preferably 1.0 to 15.0 times on a molar basis. When thecontent of the first additive is less than 0.01 mol, an etching rate maybe slower than a target level or surface oxidizing power may be reduced.Thus, a residue or a precipitation may be generated. When the content ofthe first additive exceeds 3.0 mol, an etching rate may increase. Thus,control may be limited, or a lifting phenomenon of a resist may occur.When the content of the first additive in the etchant compositionaccording to at least one embodiment is within the range, a moreexcellent etching rate may be obtained, and the generation of a residueor a precipitation may be significantly reduced.

(E) Second Additive

An etchant composition according to at least one embodiment may furtherinclude a surfactant, as a second additive (hereinafter, simply referredto as component (E)) with the first additive. According to the researchof the inventors of the various embodiments, as described above, when asurfactant is further included, as a second additive, linearity may besignificantly increased, surface roughness may be significantly reduced,and further, a taper angle of a metal pattern may be freely adjusted, ascompared to the case in which the surfactant is not further included.

On the other hand, the surfactant is a surfactant commonly known in theart. As long as the surfactant has an effect as described above, thesurfactant is not particularly limited. However, the surfactant maypreferably be a nonionic surfactant among the above-mentioned compounds.For example, the nonionic surfactant may be an alcohol-based nonionicsurfactant such as polyethyleneglycol, polypropyleneglycol,polyetherpolyol, polyglycololeicacid, or the like; or a polymer-basedcompound such as gelatin, an ethylene oxide (EO)-propylene oxide (PO)copolymer, or the like, but is not limited thereto. The surfactant maybe used alone, or a plurality of surfactants may be used in combination.

On the other hand, the second additive is included in an etchantcomposition of 1 kg, preferably in the range of 1.0 ppm to 30,000 ppm,more preferably in the range of 1.0 ppm to 20,000 ppm, and further morepreferably in the range of 5.0 ppm to 10,000 ppm. When the content ofthe second additive is less than 1.0 ppm, there may be limitations onadjusting an angle of a metal pattern within a desired range. When thecontent thereof exceeds 30,000 ppm, an etching rate of copper may bereduced. Thus, a desired copper etching rate may not be obtained. Whenthe content of the second additive in an etchant composition accordingto at least one embodiment is within the range, linearity mayeffectively be significantly increased, surface roughness mayeffectively be significantly reduced, and further a taper angle of ametal pattern may effectively be adjusted within a desired range.

(F) Third Additive

An etchant composition according to at least one embodiment may furtherinclude an alkali metal salt, as a third additive (hereinafter, simplyreferred to as component (F)) with the first additive and the secondadditive as needed. According to the research of the inventors of thevarious embodiments, as described above, when the alkali metal salt maybe further included, as the third additive, it has an effect ofimproving surface roughness of a metal pattern, as compared to the casein which the alkali metal salt is not included.

On the other hand, as long as the alkali metal salt has an effectdescribed above, the alkali metal salt is not particularly limited.However, the alkali metal salt may preferably be an alkali metal saltcontaining a halogen such as potassium fluoride, sodium fluoride,potassium chloride, sodium chloride, potassium bromide, sodium bromide,potassium iodide, sodium iodide, or the like; an alkali metal salt of anorganic acid having one or more carboxyl groups such as potassiumcitrate, sodium citrate, potassium acetate, sodium acetate, potassiumoxalate, potassium lactate, or the like; and an alkali metal salt of astrong alkali, such as sodium hydroxide, potassium hydroxide, or thelike. The alkali metal salt may be used alone, or a plurality of alkalimetal salts may be used in combination.

On the other hand, the third additive is included in an etchantcomposition of 1 kg, preferably in the range of 0.01 mol to 2.0 mol,more preferably in the range of 0.05 mol to 1.0 mol, and further morepreferably in the range of 0.1 mol to 0.5 mol. In addition, a mixingratio of the third additive with respect to the copper ion source maybe, preferably 0.01 to 100.0 times, more preferably 0.05 to 20.0 times,and further more preferably 0.1 to 5.0 times on a molar basis. When thecontent of the third additive is less than 0.01 mol, surface roughnessof a metal pattern may be poor. When the content thereof exceeds 2.0mol, a copper etching rate may be slower or precipitation may occur.When the content of the third additive in an etchant compositionaccording to at least one embodiment is within the range, it has aneffect of improving surface roughness of a metal pattern.

On the other hand, an alkali metal salt containing fluorine such aspotassium fluoride, sodium fluoride, or the like may have a function asa fluoride ion source described above. In addition, an alkali metalsalt, containing halogen other than fluorine, such as potassiumchloride, sodium chloride, potassium bromide, sodium bromide, potassiumiodide, sodium iodide, or the like, may have a function as a halogen ionsource except a fluorine ion as described above. Thus, when an alkalimetal salt containing fluorine is included in an etchant compositionaccording to at least one embodiment, the content of the component (C)may be the content in which another fluoride ion source and an alkalimetal salt containing fluorine are totalled. In addition, the content ofthe component (F) may be the content in which another third additive andan alkali metal salt containing fluorine are totalled. In a mannersimilar thereto, when an alkali metal salt containing halogen other thanfluorine is included in an etchant composition according to at least oneembodiment, the content of the component (D) may be the content in whichanother first additive and an alkali metal salt containing halogen otherthan fluorine are totalled. In addition, the content of the component(F) may be the content in which another third additive and an alkalimetal salt containing halogen other than fluorine are totalled.

(G) Other Additives

An etchant composition according to at least one embodiment may include,in addition to components described above, as needed, water and variousother additives used according to the related art for an etchantcomposition for etching, in the range not inhibiting an effect of anetchant composition described above. For example, water may preferablybe water from which a metal ion, organic impurities, particles, and thelike have been removed by distillation, an ion exchange treatment, afilter treatment, various adsorption treatments, and the like, morepreferably pure water, and further more preferably ultrapure water. Inaddition, other additives may be a pH adjusting agent. In this case, thepH adjusting agent is not particularly limited as long as it does notinhibit an effect of the etchant composition.

On the other hand, an etchant composition according to at least oneembodiment is capable of etching a multilayered film containing copperand titanium, even when hydrogen peroxide or persulfate is not included.Thus, the etchant composition may not include hydrogen peroxide orpersulfate.

On the other hand, an etchant composition according to at least oneembodiment may further include an azole-based compound commonly used inthe art for adjusting a desired taper angle of a metal pattern, or maynot include the azole-based compound.

(H) pH

An etchant composition according to at least one embodiment maypreferably have a pH value of 3 or less. When a pH value exceeds 3, anetching rate may be lowered and a lifting phenomenon of a resist mayoccur. However, when pH is significantly low, an etching rate may besignificantly high, and thus, there may be limitations on controlling anetching time.

2. Method for Etching Multilayered Film

An etching method according to at least one embodiment, a method ofetching a multilayered film containing copper and titanium, includescontacting the multilayered film with an etchant composition in thevarious embodiments described above.

In an etching method according to at least one embodiment, amultilayered film containing copper and titanium is an etching object. Amultilayered film, an etching object, may have a multilayered structureincluding a layer of copper or a compound in which copper is a maincomponent, and a layer of titanium or a compound in which titanium is amain component. The multilayered film may be a 2-layer film, in which alayer of copper or a compound in which copper is a main component and alayer of titanium or a compound in which titanium is a main componentare stacked, a 3-layer film, in which a layer of titanium or a compoundin which titanium is a main component, a layer of copper or a compoundin which copper is a main component, and a layer of titanium or acompound in which titanium is a main component, are stacked, or thelike.

Copper or a compound in which copper is a main component may be copper(a metal) or copper alloy, or copper oxide, copper nitride, or the like.Titanium or a compound in which titanium is a main component may betitanium (a metal) or titanium alloy, or oxide or nitride thereof, orthe like.

For example, an etching object may be obtained, as the multilayered filmdescribed above is formed on a substrate such as a glass, or the like,an upper surface thereof is coated with a resist, a desired pattern maskis exposed and transferred, and a desired resist pattern is formed bydevelopment. A substrate for formation of a multilayered film may be, inaddition to a glass substrate, for example, a substrate having a layeredstructure in which a gate wiring is formed on a glass plate, and aninsulating film formed of silicon nitride, or the like is prepared onthe gate wiring. In the present disclosure, as the etchant compositionis in contact with an etching object to etch a multilayered film and adesired multilayered film wiring is formed, a multilayered film wiring,in which a multilayered film including a layer formed by containingtitanium and a layer formed by containing copper is prepared, may beobtained. The multilayered film wiring containing copper and titaniummay preferably be used for a wiring, or the like, of a display devicesuch as a flat panel display, or the like.

A method of contacting an etching object with an etchant composition isnot particularly limited, and may be, for example, a wet etching methodsuch as a method of contacting an object by dropping (single wafer spinprocessing) an etchant composition, spraying thereof, or the like, amethod of immersing an etching object in an etchant composition, or thelike. In the various embodiments, any method may be performed foretching. In detail, a method of contacting an etching object with anetchant composition by spraying is preferably used. In addition, themethod of contacting an object with an etchant composition by sprayingmay be a method of spraying an etchant composition downwards from aposition above an etching object, a method of spraying an etchantcomposition upwards from a position below an etching object, or thelike. In this case, a spray nozzle may be fixed, or may perform anoperation in which a neck moves, sliding-moves, or the like. Inaddition, the spray nozzle may be installed vertically downwards, or maybe installed at an incline. An etching object may be fixed, or anoperation such as oscillating, rotating, or the like, may be appliedthereto. Alternatively, the etching object may be horizontally placed ormay be placed at an incline.

A temperature in which an etchant composition is used may preferably bea temperature of 10° C. to 70° C. In detail, the temperature ispreferably 20° C. to 50° C. When a temperature of an etchant compositionis 10° C. or greater, an etching rate becomes good. Thus, excellentproduction efficiency may be obtained. On the other hand, when atemperature thereof is 70° C. or less, a change in a liquid compositionis suppressed. Thus, etching conditions may be uniformly maintained. Byraising a temperature of an etchant composition, an etching rate may beincreased. After considering a small composition changed in an etchantcomposition by suppressing, it may be required to appropriatelydetermine an optimum processing temperature.

3. Method for Preparing Display Device

FIGS. 4A and 4B are flow charts illustrating a method of manufacturing adisplay device according to at least one embodiment.

With reference to FIG. 4A, a method for preparing a display deviceaccording to at least one embodiment may include: forming a gate patternforming a gate line and a gate electrode connected to each other on asubstrate (s100); forming a semiconductor pattern on the gate electrode(s200); forming a data pattern forming a data line intersecting, whilebeing insulated from, the gate line, a source electrode connected to thedata line, and a drain electrode spaced apart from the source electrode(s300); forming a pixel electrode connected to the drain electrode(s100); and forming a common electrode insulated from the pixelelectrode (s500).

With reference to FIG. 4B, at least one of the forming a gate pattern(s100) and the forming a data pattern (s300) may include: forming ametal layer on a substrate (s10); and etching the metal layer with anetchant (s20).

According to at least one embodiment, the forming a metal layer on asubstrate (s10) may include forming a first metal layer on the substrateand forming a second metal layer on the first metal layer. The firstmetal layer may be formed by depositing a metal containing copper, andthe second metal layer may be formed by depositing a metal containingtitanium or molybdenum.

According to at least one embodiment, the etchant may include (A) acopper ion source; (B) a source of an organic acid ion having one ormore carboxyl groups in a molecule; (C) a fluoride ion source; (D) anetching controller, a surface oxidizing power enhancer, or a combinationthereof, as a first additive; and (E) a surfactant, as a secondadditive.

FIGS. 6A, 8A, 9A, and 10A are plan views sequentially illustrating amethod of manufacturing a display device according to at least oneembodiment.

FIGS. 5, 6B, 7, 8B, 9B, 10B, and 11 are cross-sectional viewssequentially illustrating a method of manufacturing a display deviceaccording to at least one embodiment.

FIGS. 6B, 8B, 9B, and 10B are cross-sectional views taken along lineI-I′ of FIGS. 6A, 8A, 9A, and 10A, respectively.

The display board may include an insulating substrate including aplurality of pixel regions, a plurality of gate lines, a plurality ofdata lines, a plurality of common electrode lines, and a plurality ofpixels. Here, since each pixel has the same structure, a single pixel ofthe pixels, two gate lines GL adjacent to the pixel, and two data linesDL are illustrated for convenience of explanation.

With reference to FIG. 11, the display board includes a thin filmtransistor TFT, and the thin film transistor TFT may include a gateelectrode 1100, a gate insulating film 2000, a semiconductor pattern2100, a source electrode 2300, and a drain electrode 2500. The thin filmtransistor is formed by patterning in a photolithography process.

With reference to FIG. 5, a first metal layer ML1 and a second metallayer ML2 are sequentially stacked on a substrate 1000. The first metallayer may be formed by depositing metal containing copper, and thesecond metal layer may be formed by depositing metal containing titaniumor molybdenum.

FIGS. 4A, 6A, and 6B, the first metal layer ML1 and the second metallayer ML2 are etched using an etchant to form a gate pattern of a gateline GL and the gate electrode 1100 on the substrate 1000 (s100). Theetchant may include: (A) a copper ion source; (B) a source of an organicacid ion having one or more carboxyl groups in a molecule; (C) afluoride ion source; (D) an etching controller, a surface oxidizingpower enhancer, or a combination thereof, as a first additive; and (E) asurfactant, as a second additive. Each of the gate line GL and the gateelectrode 1100 may be formed of a first gate metal layer 1100 p and asecond gate metal layer 1100 r.

With reference to FIG. 7, a gate insulating film 2000 is formed on thesubstrate 1000 in which the gate electrode 1100 is formed. The gateinsulating film 2000 is disposed on the gate electrode 1100 to cover thegate electrode 1100.

With reference to FIGS. 4A, 8A, and 8B, a semiconductor pattern 2100 isformed on the gate insulating film 2000 (s200). The semiconductorpattern 2100 may oppose the gate electrode 1100 with the gate insulatingfilm 2000 interposed therebetween.

With reference to FIGS. 4A, 9A, and 9B, a data pattern is formed on thesemiconductor pattern 2100 (s300). The data pattern may include a dataline DL intersecting, while being insulated from, the gate line GL, asource electrode 2300 connected to the data line DL, and a drainelectrode 2500. The data line DL may be formed by etching a first datametal layer (not shown) formed by depositing metal containing copper anda second data metal layer (not shown) formed by depositing metalcontaining titanium or molybdenum with the etchant. In addition, thesource electrode 2300 may be formed by etching a first source metallayer 2300 p formed by depositing metal containing copper and a secondsource metal layer 2300 r formed by depositing metal containing titaniumor molybdenum with the etchant. In addition, the drain electrode 2500may be formed by etching a first drain metal layer 2500 p formed bydepositing metal containing copper and a second drain metal layer 2500 rformed by depositing metal containing titanium or molybdenum with theetchant. The etchant may include: (A) a copper ion source; (B) a sourceof an organic acid ion having one or more carboxyl groups in a molecule;(C) a fluoride ion source; (D) an etching controller, a surfaceoxidizing power enhancer, or a combination thereof, as a first additive;and (E) a surfactant, as a second additive. The source electrode 2300and the drain electrode 2500 may be spaced apart from each other, andmay be connected to the semiconductor pattern 2100.

With reference to FIG. 10B, an insulating layer 3000 is formed on thesource electrode 2300 and the drain electrode 2500. A contact hole CTexposing a portion of an upper surface of the drain electrode 2500 isformed in the insulating layer 3000. In addition, with reference toFIGS. 3A, 9A, and 9B, a pixel electrode 3100 is formed by patterning atransparent electrode on the insulating layer 3000. The pixel electrode3100 may be disposed on the insulating layer 3000, and may beelectrically connected to the contact hole CT.

With reference to FIGS. 4A and 11, a common electrode 4100 insulatedfrom the pixel electrode 3100 is formed (s500). The common electrode4100 may be formed on the substrate 1000 in which a color filtersubstrate 4000 or a thin film transistor is formed. In addition, aliquid crystal layer LC may be formed between the substrate 1000 inwhich the thin film transistor is formed and the color filter substrate4000.

Hereinafter, the present disclosure will be described in more detailthrough various examples.

Preparation Example 1: Preparation of Titanium/Copper/Titanium/GlassSubstrate

A layer (500 Å) formed of titanium (a metal) was formed by sputteringtitanium onto a glass substrate (dimensions: 150 mm×150 mm), after alayer (8000 Å) formed of copper (a metal) was formed by sputteringcopper, and a layer (500 Å) formed of titanium (a metal) was formed bysputtering titanium, and thus, a 3-layer film has a structure formed oftitanium/copper/titanium. Here, a resist was applied, after aline-shaped pattern mask (a line width: 20 μm) was exposed andtransferred, and developed, and thus, a titanium/copper/titanium/glasssubstrate in which a resist pattern was formed was manufactured.

Preparation Example 2: Preparation of Copper/Titanium/Glass Substrate

A layer (200 Å) formed of titanium (a metal) was formed by sputteringtitanium on a glass substrate (dimensions: 150 mm×150 mm), after a layer(5000 Å) formed of copper (a metal) was formed by sputtering copper, andthus, a 2-layer structure was formed of copper/titanium. Here, a resistwas applied, after a line-shaped pattern mask (a line width: 20 μm) wasexposed and transferred, and developed, and thus, acopper/titanium/glass substrate in which a resist pattern was formed wasmanufactured.

Comparative Example 1—Preparation of Etchant Composition

In a polypropylene container with capacity of 100 ml, after pure waterof 91.5 g, (A) copper nitrate (Wako Pure Chemical Ind., Ltd., limitedgrade, Molecular Weight 182.56) of 4.0 g as a copper ion source, (B)citric acid (Wako Pure Chemical Ind., Ltd., limited grade, MolecularWeight 192.13) of 4.0 g as a source of an organic acid ion, and (C)ammonium fluoride (Morita Chemical Industries Co., Ltd., MolecularWeight 37.5) of 0.5 g as a fluoride ion source were inserted thereintoand stirred, and dissolution of each component was confirmed to preparean etchant composition.

For the content of each component of the etchant composition obtained asdescribed above, per a liquid composition of 1 kg, a component (A) was0.27 mol and a component (B) was 0.31 mol. In addition, a mixing ratio(a molar ratio) of the component (B) with respect to the component (A)was 1.17 times. In addition, the content of a component (C) per a liquidcomposition of 1 kg was calculated in double the equivalent of ammoniumfluoride and the content thereof was 0.14 mol. A mixing ratio (a molarratio) of the component (C) with respect to the component (A) was 0.5times. A pH value of an etchant composition having been obtained was2.5.

Comparative Examples 2 and 3, Reference Examples 1 and 2, and Examples 1to 5: Preparation of Etchant Composition

The content of each component was provided to prepare an etchantcomposition in the same manner as Comparative Example 1 except asillustrated in Tables 1 and 2.

TABLE 1 Comparative Comparative Comparative Reference ReferenceClassification Example 1 Example 2 Example 3 Example 1 Example 2 (A)Type copper copper copper copper copper nitrate nitrate nitrate nitratenitrate Content 0.27 0.27 0.32  0.27  0.27 (mol/kg) (B) Type citric acidcitric acid maleic acid succinic acid succinic acid Content 0.31 0.310.5  0.4 0.4 (mol/kg) Mixing 1.17 1.17 1.58  1.48  1.48 ratio (C) Typeammonium ammonium ammonium ammonium ammonium fluoride fluoride fluoridefluoride fluoride Content 0.14 0.14 0.14  0.14  0.14 (mol/kg) Mixing0.51 0.51 0.42  0.51  0.51 ratio (D) Type — hydrochloric hydrochlorichydrochloric hydrochloric acid acid acid acid — — nitric acid sulfuricacid sulfuric acid Content — 0.82 1.43 1.0 1.0 (mol/kg) Mixing — 3.084.47 3.7 3.7 ratio (E) Type — — — polyglycol polyglycol oleic acid oleicacid Content — — — Less than 1 35,000    (ppm) (F) Type — — — sodiumsodium chloride chloride Content — — — 0.3 0.3 (mol/kg) Mixing — — — 1.11.1 ratio D.I residue residue residue residue residue pH 2.5  2.3  1.6 1.7 1.8

TABLE 2 Classification Example 1 Example 2 Example 3 Example 4 Example 5(A) Type copper sulfate copper sulfate copper nitrate copper sulfatecopper sulfate Content 0.16 0.32  0.27 0.32 0.16 (mol/kg) (B) Typemaleic acid maleic acid succinic acid acetic acid glutaric acid Content0.42 0.76 0.4 1.50 0.38 (mol/kg) Mixing ratio 2.62 2.36  1.48 4.69 2.38(C) Type ammonium ammonium ammonium ammonium ammonium fluoride fluoridefluoride fluoride fluoride Content 0.14 0.14  0.14 0.14 0.14 (mol/kg)Mixing ratio 0.84 0.42  0.51 0.44 0.88 (D) Type iodic acid hydrochlorichydrochloric iodic acid bromic acid acid acid sulfuric acid nitric acidsulfuric acid nitric acid sulfuric acid Content 0.5  0.79 1.0 1.47 1.0 (mol/kg) Mixing ratio 3.18 2.48 3.7 4.59 6.25 (E) Type polyether-polypropylene- polyglycol- ethylene polyethylene- polyol glycol oleicacid oxide- glycol propylene oxide — — — polyphenylene- glycol Content5,000    5,000    10,000    5   10,000     (ppm) (F) Type — potassiumsodium potassium sodium citrate chloride chloride citrate Content — 0.2 0.3 0.2  0.2  (mol/kg) Mixing ratio — 0.63 1.1 0.63 1.25 D.I residueresidue residue residue residue pH 2.2  1.6  1.8 1.0  2.1 

Experimental Example 1: Characteristics Evaluation-1

As an etchant composition according to an Example was used, atitanium/copper/titanium/glass substrate in which a resist patternobtained in Preparation Example 1 was formed was etched to obtain anevaluation substrate. With respect to the evaluation substrate havingbeen obtained, storage over time, accumulation over time, liquidreactivity, photoresist lifting (PR lifting), metal wiring disconnection(mouse bite), presence of precipitation, and a glass reduction amountwere measured and illustrated in Table 3. On the other hand, liquidreactivity was determined by whether bubbling occurred or a color of anouter surface was changed when an etchant was left at room temperature,and photoresist lifting was determined by whether lifting of aphotoresist occurred when etching under 50% over etching conditions ofEPD. In addition, the presence of a precipitation was determined bywhether a precipitation was generated over time (over 48 hours) afterdropping an etchant on an evaluation substrate, and a glass reductionamount was determined by measuring an amount in which a glass substratewas reduced by etching when a titanium layer was etched. Otherevaluations were determined using an evaluation method commonly used inthe art.

TABLE 3 Storage over time Accumulation Glass reduction [@3 months/roomover time Liquid Metal wiring PR amount Classification temperature][based on Cu] reactivity disconnection Precipitatation lifting [g, 7days] Example 1 ◯ 20,000 ppm ◯ ◯ ◯ ◯ ◯ Example 2 ◯ 20,000 ppm ◯ ◯ ◯ ◯ ◯Example 3 ◯ 20,000 ppm ◯ ◯ ◯ ◯ ◯ Example 4 ◯ 20,000 ppm ◯ ◯ ◯ ◯ ◯Example 5 ◯ 20,000 ppm ◯ ◯ ◯ ◯ ◯ Good Poor ◯ X

As illustrated in Table 3, since an etchant composition according to atleast one embodiment has a relatively long lifespan, an amount of wasteliquid may be significantly reduced. Since a self-reactive factor wasnot present inside an etchant, liquid reactivity may be stable. Since pHwas low, a photoresist lifting (PR lifting) phenomenon may not occur. Inaddition, an amount of precipitation may be insignificant, andevaluation of metal wiring disconnections and a glass reduction amountwere also excellent.

Experimental Example 2: Characteristics Evaluation-2

As an etchant composition according to the Example, the ComparativeExample, and the Reference Example was used, atitanium/copper/titanium/glass substrate in which a resist patternobtained in Preparation Example 1 was formed was etched to obtain anevaluation substrate. With respect to an evaluation substrate havingbeen obtained, a surface residue, a multilayer film total amount removalpoint (End Point Detector, EPD), critical dimension loss (CD loss), andtitanium tailing were measured and are illustrated in Table 4. Ameasurement method is as described below, and the specific meaning ofterms is as illustrated in FIG. 1. On the other hand, a surface residuewas confirmed by whether of presence/absence of metal on a glasssubstrate surface (or an insulating film), and a multilayered film totalamount removal point was determined by measuring the time of a point atwhich copper and titanium layers were removed. In addition, criticaldimension loss was determined by measuring a distance between an end ofa photoresist and an end of a copper layer, and tailing was determinedby measuring a distance from an end of a copper layer to an exposedtitanium layer.

TABLE 4 Comparative Comparative Comparative Reference ReferenceClassification Example 1 Example 2 Example 3 Example 1 Example 2 SurfaceX X ◯ ◯ ◯ residue EPD X ◯ ◯ ◯ X CD loss ◯ ◯ ◯ ◯ ◯ Tailing ◯ ◯ ◯ ◯ ◯Classification Example 1 Example 2 Example 3 Example 4 Example 5 Surface◯ ◯ ◯ ◯ ◯ residue EPD ◯ ◯ ◯ ◯ ◯ CD loss ◯ ◯ ◯ ◯ ◯ Tailing ◯ ◯ ◯ ◯ ◯ EPDCD loss Tailing 2 More More More Surface residue minutes than 2 1.5 μmthan 1.5 0.1 μm than 0.1 Absence Presence or less minutes or less μm orless μm ◯ X ◯ X ◯ X ◯ X

As shown in Table 4, when an etchant composition according to an examplewas used, critical dimension loss (CD loss) and titanium tailing couldbe significantly reduced. In addition, when an etching controller wasfurther included, as a first additive, a multilayered film total amountremoval point (EPD) could be lowered to 2 minutes or less. When asurface oxidizing power enhancer was further included, as a firstadditive, a surface residue could be prevented from being generated. Onthe other hand, when the content of a second additive, exceeding 30,000ppm, was contained, a multilayered film total amount removal point (EPD)was beyond 2 minutes.

Experimental Example 3: Characteristics Evaluation-3

As an etchant composition according to the Example, the ComparativeExample, and the Reference Example was used, atitanium/copper/titanium/glass substrate in which a resist patternobtained in Preparation Example 1 was formed was etched to obtain anevaluation substrate. With an evaluation substrate having been obtained,a taper angle of a metal pattern, linearity and roughness, a glasssubstrate damage (Glass attack) were measured and are provided in Table5. A measurement method was as illustrated below, and the specificmeaning of the term was as shown in FIG. 1. On the other hand, an angleof a metal pattern was determined by measuring an angle when observing across section of a metal pattern, linearity and roughness were confirmedby whether an insulating film was normally covered in a step coverage inwhich an insulating film was stacked after etching treatment, and aglass substrate damage was confirmed by whether of a damage to a surfaceof a glass substrate using an electron microscope after an etchingtreatment.

TABLE 5 Comparative Comparative Comparative Reference ReferenceClassification Example 1 Example 2 Example 3 Example 1 Example 2 Taper@70° @70° @70~80° @70° @less than 30° Roughness X X X ◯ ◯ Glass attack ◯◯ ◯ ◯ ◯ Classification Example 1 Example 2 Example 3 Example 4 Example 5Taper @30~40° @30~50° @30~40° @30~40° @30~40° Roughness ◯ ◯ ◯ ◯ ◯ Glassattack ◯ ◯ ◯ ◯ ◯ Linearity and roughness Damage to glass substrate GoodPoor Good Poor ◯ x ∘ x

As seen in Table 5, when an etchant composition according to at leastone embodiment further included a surfactant, as a second additive, inaddition to a first additive, it was confirmed that linearity androughness thereof were good, damage to a glass substrate was alsosignificantly reduced, and a taper angle of a metal pattern may beadjusted to 30° to 50°. In addition, when the etchant compositionfurther included an alkali metal salt, as a third additive, in additionthereto, metal pattern roughness was improved. However, when anazole-based compound was used as a second additive or the content of asecond additive, less than 1 ppm or exceeding 30,000 ppm, was contained,there were limitations on adjusting a taper angle of a metal pattern toan angle between 30° to 50°.

Experimental Example 4: Characteristics Evaluation-4

As an etchant composition according to Comparative Example 3 was used, atitanium/copper/titanium/glass substrate (Ti 500 Å/Cu 8000 Å/Ti 500 Å)in which a resist pattern obtained in Preparation Example 1 was formed,and a copper/titanium/glass substrate (Cu 5000 Å/Ti 200 Å) in which aresist pattern obtained in Preparation Example 2 was formed were etchedunder 30% over etching conditions of EPD, rinse-treated, and then driedusing a blower. A result observed thereafter, using an electronmicroscope ((a) S-4800 10.0 kV 10.7 mm×30.0 k SE(M)/(b) SU9000 10.0kV×20.0 k SE/(c) S-4800 10.0 kV 9.8 mm×50.0 k SE(M)/(d) SU9000 10.0kV×20.0 k SE) is illustrated in FIG. 2. In this case, FIGS. 2A and 2Bwere the cases in which a glass substrate obtained in PreparationExample 1 was etched, and FIGS. 2C and 2D were the cases in which aglass substrate obtained in Preparation Example 2 was etched.

When an etchant composition according to Comparative Example 3, notcontaining a second additive, was used, as shown in FIGS. 2A and 2C, itwas confirmed that implementation of a taper angle of 40°±10° waslimited.

Experimental Example 5: Characteristics Evaluation-5

As an etchant composition according to Example 2 was used, atitanium/copper/titanium/glass substrate (Ti 500 Å/Cu 8000 Å/Ti 500 Å)in which a resist pattern obtained in Preparation Example 1 was formedand a copper/titanium/glass substrate (Cu 5000 Å/Ti 200 Å) in which aresist pattern obtained in Preparation Example 2 was formed were etchedunder 30% over etching conditions of EPD, rinse-treated, and dried usinga blower. A result observed using an electron microscope ((a) S-480010.0 kV 10.7 mm×30.0 k SE(M)/(b) S-4800 10.0 kV 12.3 mm×20.0 k SE(M)/(c)S-4800 10.0 kV 8.5 mm×30.0 k SE(M)/(d) S-4800 10.0 kV 10.6 mm×50.0 kSE(M)/(e) SU9000 10.0 kV×20.0 k SE) is illustrated in FIG. 3. In thiscase, FIGS. 3A, 3B, and 3C were cases in which a glass substrateobtained in Preparation Example 1 was etched, and FIGS. 3D and 3E werecases in which a glass substrate obtained in Preparation Example 2 wasetched.

When an etchant composition according to at least one embodiment wasused, as seen in FIGS. 3A and 3D, it was confirmed that a taper angle of40°±10° could be implemented. In addition, as seen in FIGS. 3B, 3C, and3E, it was confirmed that linearity of a pattern could be significantlyincreased and surface roughness could be significantly reduced.

The present disclosure has been shown and described with reference tovarious embodiments thereof, but is not limited thereto. It will beapparent to those skilled in the art that various changes andmodifications thereof may be made within the spirit and scope of thevarious embodiments, and therefore to be understood that such changesand modifications belong to the scope of the appended claims.

The invention claimed is:
 1. An etchant composition, comprising: (A) acopper ion source; (B) a source of an organic acid ion having one ormore carboxyl groups in a molecule; (C) a fluoride ion source; (D) anetching controller, a surface oxidizing power enhancer, or a combinationthereof, as a first additive; and (E) a surfactant, as a secondadditive, wherein the etchant composition has a pH value of 3 or less.2. The etchant composition of claim 1, wherein, in the etchantcomposition, the contents of (A) to (E) are 0.02 mol/kg to 1.0 mol/kg of(A) the copper ion source; 0.01 mol/kg to 3.0 mol/kg of (B) the sourceof an organic acid ion having one or more carboxyl groups in a molecule;0.01 mol/kg to 1.0 mol/kg of (C) the fluoride ion source; 0.01 mol/kg to3.0 mol/kg of (D) the first additive; and 1.0 ppm to 30,000 ppm of (E)the second additive.
 3. The etchant composition of claim 1, wherein (A)the copper ion source is at least one selected from the group consistingof copper, copper sulfate, copper nitrate, copper chloride, copperfluoride, copper phosphide, copper hydroxide, copper acetate, coppercitrate, copper lactate, copper oleate, a copper silicon compound,copper bromide, and copper carbonate.
 4. The etchant composition ofclaim 1, wherein (B) the source of an organic acid ion having one ormore carboxyl groups in a molecule is at least one selected from thegroup consisting of formic acid, acetic acid, propionic acid, butyricacid, caproic acid, caprylic acid, capric acid, lauric acid, stearicacid, gluconic acid, citric acid, tartaric acid, malic acid, succinicacid, oxalic acid, maleic acid, and an ammonium salt thereof.
 5. Theetchant composition of claim 1, wherein a mixing ratio of (B) the sourceof an organic acid ion with respect to (A) the copper ion source is 0.01to 150.0 times on a molar basis.
 6. The etchant composition of claim 1,wherein (C) the fluoride ion source is at least one selected from thegroup consisting of hydrofluoric acid, ammonium fluoride, acid ammoniumfluoride, potassium fluoride, ammonium fluoroborate, potassiumbisulfite, potassium borofluoride, sodium fluoride, sodium bisulfite,aluminum fluoride, boron fluoride, lithium fluoride, calcium fluoride,and copper fluoride.
 7. The etchant composition of claim 1, wherein amixing ratio of (C) the fluoride ion source with respect to (A) thecopper ion source is 0.01 to 50.0 times on a molar basis.
 8. The etchantcomposition of claim 1, wherein (D) the etching controller, as a firstadditive, is a halogen ion source, except for a fluorine ion.
 9. Theetchant composition of claim 8, wherein the halogen ion source, exceptfor the fluorine ion, is at least one selected from the group consistingof hydrochloric acid, potassium chloride, sodium chloride, ammoniumchloride, bromic acid, potassium bromide, sodium bromide, ammoniumbromide, iodic acid, potassium iodide, sodium iodide, and ammoniumiodide.
 10. The etchant composition of claim 1, wherein (D) the surfaceoxidizing power enhancer, as a first additive, is an inorganic acid. 11.The etchant composition of claim 10, wherein the inorganic acid is atleast one selected from the group consisting of sulfuric acid, nitricacid, phosphoric acid, and hydrochloric acid.
 12. The etchantcomposition of claim 1, wherein a mixing ratio of (D) the first additivewith respect to (A) the copper ion source is 0.01 to 150.0 times on amolar basis.
 13. The etchant composition of claim 1, wherein (E) thesurfactant, as a second additive, is a nonionic surfactant.
 14. Theetchant composition of claim 13, wherein the nonionic surfactant is atleast one selected from the group consisting of polyethyleneglycol,polypropyleneglycol, polyetherpolyol, polyglycololeicacid, gelatin, andan ethylene oxide (EO)-propylene oxide (PO) copolymer.
 15. The etchantcomposition of claim 1, wherein the etchant composition furthercomprises (F) an alkali metal salt, as a third additive.
 16. The etchantcomposition of claim 15, wherein (F) the alkali metal salt, as a thirdadditive, is at least one selected from the group consisting of analkali metal salt containing halogen, an alkali metal salt of an organicacid having one or more carboxyl groups in a molecule, and an alkalimetal salt of a strong alkali.
 17. The etchant composition of claim 15,wherein, in the etchant composition, the content of (F) the thirdadditive is 0.01 mol/kg to 2.0 mol/kg.
 18. The etchant composition ofclaim 15, wherein a mixing ratio of (F) the third additive with respectto (A) the copper ion source is 0.01 to 100.0 times on a molar basis.19. The etchant composition of claim 1, wherein the etchant compositionis provided for etching a multilayered film containing copper andtitanium.